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SI4850EY-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOIC-8

Description:

SOIC-8 N-CH 60V 6A 22mΩ

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Documentation:

SI4850EY-T1-GE3 Datasheet (8 Pages)

Package Outline Dimension on5 Page 6 Page

Part Numbering System on1 Page

SI4850EY-T1-GE3 Datasheet PDF (8 Pages)

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SI4850EY-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

18 mΩ

Polarity

N-Channel

Power Dissipation

3.3 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

60 V

Continuous Drain Current (Ids)

6.00 A

Rise Time

10 ns

Input Power (Max)

1.7 W

Fall Time

12 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

3.3 W

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SI4850EY-T1-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

5 mm

Size-Width

4 mm

Size-Height

1.5 mm

Operating Temperature

-55℃ ~ 175℃ (TJ)

Minimum Packing Quantity

2500

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SI4850EY-T1-GE3 Environmental

SI4850EY-T1-GE3 Function Overview

SI4850EY-T1-GE3 Documents

SI4850EY-T1-GE3 Datasheet

VISHAY

8 Pages / 0.24 MByte

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