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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI4850EY-T1-GE3 Datasheet PDF
SI4850EY-T1-GE3
Part 3D Model
$ 0.798
SI4850EY-T1-GE3 Datasheet PDF (8 Pages)
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SI4850EY-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SO-8
Power Dissipation
3.3 W
Rise Time
10 ns
Fall Time
12 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1.7W (Ta)

SI4850EY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Size-Length
4.9 mm
Size-Width
3.9 mm
Size-Height
1.75 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

SI4850EY-T1-GE3 Documents

Vishay Siliconix
8 Pages / 0.24 MByte
Vishay Siliconix
8 Pages / 0.17 MByte

SI4850EYT1 Documents

Vishay Siliconix
MOSFET N-CH 60V 6A 8-SOIC
Vishay Semiconductor
Trans MOSFET N-CH 60V 6A 8Pin SOIC N T/R
VISHAY
SOIC N-CH 60V 6A
VISHAY
SOIC-8 N-CH 60V 6A 22mΩ
VISHAY
SOIC-8 N-CH 60V 6A 22mΩ
Vishay Siliconix
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.018Ω; ID 6A; SO-8; PD 1.7W; VGS +/-20V; gFS 2
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.018Ω; ID 6A; SO-8; PD 1.7W; VGS +/-20V; gFS 2
Vishay Siliconix
VISHAY SI4850EY-T1-GE3 MOSFET Transistor, N Channel, 6A, 60V, 18mohm, 10V, 3V
Vishay Semiconductor
Trans MOSFET N-CH 60V 6A 8Pin SOIC N T/R
Vishay Intertechnology
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