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SI9945BDY-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOIC-8

Description:

SOIC-8 Dual N 60V 4.3A 58mΩ

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Documentation:

SI9945BDY-T1-GE3 Datasheet (10 Pages)

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SI9945BDY-T1-GE3 Datasheet PDF (10 Pages)

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SI9945BDY-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

46 mΩ

Polarity

N-Channel, Dual N-Channel

Power Dissipation

3.1 W

Threshold Voltage

2.5 V

Drain to Source Voltage (Vds)

60 V

Continuous Drain Current (Ids)

4.3A

Input Capacitance (Ciss)

665pF @15V(Vds)

Input Power (Max)

3.1 W

Fall Time

10 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

3.1 W

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SI9945BDY-T1-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

5 mm

Size-Width

4 mm

Size-Height

1.5 mm

Operating Temperature

-55℃ ~ 150℃

Minimum Packing Quantity

2500

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SI9945BDY-T1-GE3 Environmental

SI9945BDY-T1-GE3 Export Classifications

SI9945BDY-T1-GE3 Function Overview

SI9945BDY-T1-GE3 Documents

SI9945BDY-T1-GE3 Datasheet

VISHAY

10 Pages / 0.26 MByte

SI9945BDY-T1-GE3 Other Datasheet PDF

VISHAY

10 Pages / 0.19 MByte

SI9945BDYT1 Documents

SI9945BDY-T1-GE3 Datasheet PDF

VISHAY

SOIC-8 Dual N 60V 4.3A 58mΩ

SI9945BDY-T1-GE3 Datasheet PDF

Vishay Siliconix

MOSFET; Dual N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 46mohm; Id 5.3; SO-8; Pd 3.1W

SI9945BDY-T1-GE Datasheet PDF

VISHAY

Transistor: N-MOSFET x2; unipolar; 60V; 5.3A; 3.1W; SO8

SI9945BDY-T1-GE3 Datasheet PDF

Vishay Semiconductor

MOSFET, Dual N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 5.3, SO-8, Pd 3.1W

SI9945BDY-T1-GE Datasheet PDF

Vishay Semiconductor

Transistor: N-MOSFET x2; unipolar; 60V; 5.3A; 3.1W; SO8

SI9945BDY-T1-GE3 Datasheet PDF

Vishay Intertechnology

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