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SI9945BDY-T1-GE3 Datasheet PDF - Vishay Siliconix

Manufacturer:

Vishay Siliconix

Category:

MOSFETs

Case Package:

SOIC-8

Description:

MOSFET; Dual N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 46mohm; Id 5.3; SO-8; Pd 3.1W

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Documentation:

SI9945BDY-T1-GE3 Datasheet (9 Pages)

Package Outline Dimension on7 Page 8 Page

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SI9945BDY-T1-GE3 Datasheet PDF (9 Pages)

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SI9945BDY-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Drain to Source Resistance (on) (Rds)

0.072 Ω

Power Dissipation

3.1 W

Input Capacitance

665pF @15V

Drain to Source Voltage (Vds)

60 V

Input Capacitance (Ciss)

665pF @15V(Vds)

Input Power (Max)

3.1 W

Fall Time

10 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

View Datasheet >

SI9945BDY-T1-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Size-Length

5 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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SI9945BDY-T1-GE3 Environmental

SI9945BDY-T1-GE3 Function Overview

SI9945BDY-T1-GE3 Documents

SI9945BDY-T1-GE3 Datasheet

Vishay Siliconix

9 Pages / 0.2 MByte

SI9945BDY-T1-GE3 Other Datasheet PDF

Vishay Siliconix

10 Pages / 0.26 MByte

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SI9945BDY-T1-GE3 Datasheet PDF

VISHAY

SOIC-8 Dual N 60V 4.3A 58mΩ

SI9945BDY-T1-GE3 Datasheet PDF

Vishay Siliconix

MOSFET; Dual N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 46mohm; Id 5.3; SO-8; Pd 3.1W

SI9945BDY-T1-GE Datasheet PDF

VISHAY

Transistor: N-MOSFET x2; unipolar; 60V; 5.3A; 3.1W; SO8

SI9945BDY-T1-GE3 Datasheet PDF

Vishay Semiconductor

MOSFET, Dual N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 5.3, SO-8, Pd 3.1W

SI9945BDY-T1-GE Datasheet PDF

Vishay Semiconductor

Transistor: N-MOSFET x2; unipolar; 60V; 5.3A; 3.1W; SO8

SI9945BDY-T1-GE3 Datasheet PDF

Vishay Intertechnology

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