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Part Datasheet Search > MOSFETs > VISHAY > SIA517DJ-T1-GE3 Datasheet PDF
SIA517DJ-T1-GE3
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SIA517DJ-T1-GE3 Datasheet PDF (14 Pages)
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SIA517DJ-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
SC-70-6
Number of Positions
6 Position
Drain to Source Resistance (on) (Rds)
0.024 Ω
Polarity
N-Channel, P-Channel
Power Dissipation
1.9 W
Threshold Voltage
1 V
Drain to Source Voltage (Vds)
12 V
Continuous Drain Current (Ids)
4.5A
Input Capacitance (Ciss)
500pF @6V(Vds)
Input Power (Max)
6.5 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
6.5 W

SIA517DJ-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.15 mm
Size-Width
2.15 mm
Size-Height
0.8 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
3000

SIA517DJ-T1-GE3 Documents

VISHAY
14 Pages / 0.31 MByte
VISHAY
14 Pages / 0.31 MByte

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Vishay Semiconductor
Trans MOSFET N/P-CH 12V 4.5A/4.3A 6Pin PowerPAK SC-70 T/R
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