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Part Datasheet Search > BJTs > Infineon > SMBT3904E6327HTSA1 Datasheet PDF
SMBT3904E6327HTSA1
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SMBT3904E6327HTSA1 Datasheet PDF (11 Pages)
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SMBT3904E6327HTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
300 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
40.0 V
Current Rating
200 mA
Case/Package
SOT-23-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
330 mW
Breakdown Voltage (Collector to Emitter)
40 V
Continuous Collector Current
0.2A
hFE Min
100 @10mA, 1V
Input Power (Max)
330 mW
DC Current Gain (hFE)
100
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
330 mW

SMBT3904E6327HTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
1 mm
Operating Temperature
150℃ (TJ)

SMBT3904E6327HTSA1 Documents

Infineon
11 Pages / 0.84 MByte
Infineon
34 Pages / 0.51 MByte
Infineon
34 Pages / 0.66 MByte
Infineon
1 Pages / 0.14 MByte

SMBT3904E6327 Documents

Infineon
SOT-23 NPN 40V 0.2A
Infineon
Trans GP BJT NPN 40V 0.2A 3Pin SOT-23 T/R
Infineon
NPN TRANSISTOR 0,2A 40V 0,33W S **
Siemens Semiconductor
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,
Infineon
SOT-23 NPN 40V 0.2A
Infineon
SOT-23 NPN 40V 0.2A
Infineon
Trans GP BJT NPN 40V 0.2A 3Pin SOT-23 T/R
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