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Part Datasheet Search > MOSFETs > Infineon > SPD03N60C3 Datasheet PDF
SPD03N60C3
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SPD03N60C3 Datasheet PDF (13 Pages)
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SPD03N60C3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
650 V
Current Rating
3.20 A
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.26 Ω
Polarity
N-Channel
Power Dissipation
38 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
650 V
Continuous Drain Current (Ids)
3.2A
Rise Time
3 ns
Maximum Forward Voltage (Max)
1.2 V
Input Capacitance (Ciss)
400pF @25V(Vds)
Input Power (Max)
38 W
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
38W (Tc)

SPD03N60C3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.223 mm
Size-Height
2.413 mm
Operating Temperature
-55℃ ~ 150℃

SPD03N60C3 Documents

Infineon
13 Pages / 0.62 MByte
Infineon
16 Pages / 0.37 MByte
Infineon
1 Pages / 0.12 MByte

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Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-252, 3 PIN
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