SSM6J51TU Datasheet PDF - Toshiba

●TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) High Current Switching Applications • Suitable for high-density mounting due to compact package • Low on-resistance: Ron = 54 mΩ (max) (@VGS = -2.5 V) 85 mΩ (max) (@VGS = -1.8 V) 150mΩ(max) (@VGS = -1.5 V)