SSM6K202FE Datasheet PDF - Toshiba

●TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ○ High-Speed Switching Applications ○ Power Management Switch Applications • 1.8 V drive • Low ON-resistance: Ron = 145 mΩ (max) (@VGS = 1.8V) Ron = 101 mΩ (max) (@VGS = 2.5V) Ron = 85 mΩ (max) (@VGS = 4.0V