SSM6K411TU Datasheet PDF - Toshiba

●TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ○ Power Management Switch Applications ○ High-Speed Switching Applications • 2.5-V drive • Low ON-resistance：RDS(ON) = 23.8 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 14.3 mΩ (max) (@VGS = 3.5 V) RDS(ON) = 12 mΩ (max) (@VGS = 4.5 V)