TPC6107 Datasheet PDF - Toshiba

●TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV) Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) • Enhancement model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA)