SSM6N37FE Datasheet PDF - Toshiba

●TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type • High-Speed Switching Applications • Analog Switching Applications • 1.5-V drive • Suitable for high-density mounting due to compact package • Low ON-resistance RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V) RDS(ON) = 2.20 Ω (max) (@VGS = 4.5 V)