ST13003D-K Datasheet PDF - ST Microelectronics

●Description

●The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications.

●Features

●■ High voltage capability

●■ Low spread of dynamic parameters

●■ Minimum lot-to-lot spread for reliable operation

●■ Very high switching speed

●■ Integrated antiparallel collector-emitter diode

●Applications

●■ Electronic ballast for fluorescent lighting