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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFBG20PBF Datasheet PDF
IRFBG20PBF
$ 0.787
IRFBG20PBF Datasheet PDF (9 Pages)
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IRFBG20PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
54W (Tc)
Drain to Source Voltage (Vds)
1000 V
Input Capacitance (Ciss)
500pF @25V(Vds)
Input Power (Max)
54 W
Power Dissipation (Max)
54W (Tc)

IRFBG20PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFBG20PBF Documents

Vishay Siliconix
9 Pages / 1.21 MByte
Vishay Siliconix
9 Pages / 0.49 MByte
Vishay Siliconix
1 Pages / 0.13 MByte

IRFBG20 Documents

International Rectifier
MOSFET N-CH 1000V 1.4A TO-220AB
Vishay Siliconix
MOSFET N-CH 1000V 1.4A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 1kV 1.4A 3Pin(3+Tab) TO-220AB
VISHAY
MOSFET N-CH 1000V 1.4A TO-220AB
IRF
Power MOSFET(Vdss=1000V, Rds(on)=11Ω, Id=1.4A)
VISHAY
Trans MOSFET N-CH 1kV 1.4A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 1000V; RDS(ON) 11Ω; ID 1.4A; TO-220AB; PD 54W; VGS +/-20V
International Rectifier
TO-220-3
Vishay Siliconix
Trans MOSFET N-CH 1kV 1.4A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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