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Part Datasheet Search > MOSFETs > ST Microelectronics > STB21N65M5 Datasheet PDF
STB21N65M5
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STB21N65M5 Datasheet PDF (22 Pages)
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STB21N65M5 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Drain to Source Resistance (on) (Rds)
0.15 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
650 V
Breakdown Voltage (Drain to Source)
650 V
Continuous Drain Current (Ids)
17A
Rise Time
10 ns
Input Capacitance (Ciss)
1950pF @100V(Vds)
Input Power (Max)
125 W
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
125W (Tc)

STB21N65M5 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
10.75 mm
Size-Width
10.4 mm
Size-Height
4.6 mm
Operating Temperature
150℃ (TJ)

STB21N65M5 Documents

ST Microelectronics
22 Pages / 1.4 MByte
ST Microelectronics
22 Pages / 1.39 MByte
ST Microelectronics
10 Pages / 0.75 MByte

STB21N65 Documents

ST Microelectronics
D2PAK N-CH 650V 17A
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