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Part Datasheet Search > MOSFETs > ST Microelectronics > STS1NK60Z Datasheet PDF
STS1NK60Z
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STS1NK60Z Datasheet PDF (8 Pages)
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STS1NK60Z Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
600 V
Current Rating
250 mA
Case/Package
SOIC-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
13 Ω
Polarity
N-Channel
Power Dissipation
2 W
Threshold Voltage
3.75 V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
250 mA
Rise Time
5 ns
Input Capacitance (Ciss)
94pF @25V(Vds)
Fall Time
28 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2W (Tc)

STS1NK60Z Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Height
1.65 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STS1NK60Z Documents

ST Microelectronics
8 Pages / 0.29 MByte
ST Microelectronics
17 Pages / 0.42 MByte

STS1NK60 Documents

ST Microelectronics
N-CHANNEL 600V 13Ω 0.25A SO-8 ZENER-PROTECTED SUPERMESH POWER MOSFET
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