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Part Datasheet Search > MOSFETs > ST Microelectronics > STB6NK90ZT4 Datasheet PDF
STB6NK90ZT4
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STB6NK90ZT4 Datasheet PDF (18 Pages)
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STB6NK90ZT4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
900 V
Current Rating
5.80 A
Case/Package
TO-263-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.56 Ω
Polarity
N-Channel
Power Dissipation
140 W
Threshold Voltage
3.75 V
Input Capacitance
1350 pF
Drain to Source Voltage (Vds)
900 V
Breakdown Voltage (Drain to Source)
900 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
5.80 A
Rise Time
45 ns
Input Capacitance (Ciss)
1350pF @25V(Vds)
Input Power (Max)
140 W
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
140W (Tc)

STB6NK90ZT4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.4 mm
Size-Width
9.35 mm
Size-Height
4.6 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STB6NK90ZT4 Documents

ST Microelectronics
18 Pages / 0.46 MByte
ST Microelectronics
19 Pages / 0.45 MByte
ST Microelectronics
15 Pages / 0.75 MByte
ST Microelectronics
27 Pages / 0.85 MByte
ST Microelectronics
5 Pages / 0.04 MByte

STB6NK90 Documents

ST Microelectronics
D2PAK N-CH 900V 5.8A
ST Microelectronics
D2PAK N-CH 900V 5.8A
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