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STD1NK60T4
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STD1NK60T4 Datasheet PDF (15 Pages)
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STD1NK60T4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
1.00 A
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
8 Ω
Polarity
N-Channel
Power Dissipation
30 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
1.00 A
Rise Time
5 ns
Input Capacitance (Ciss)
156pF @25V(Vds)
Input Power (Max)
30 W
Fall Time
25 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
30W (Tc)

STD1NK60T4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.6 mm
Size-Width
6.2 mm
Size-Height
2.4 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STD1NK60T4 Documents

ST Microelectronics
15 Pages / 0.41 MByte
ST Microelectronics
16 Pages / 0.41 MByte
ST Microelectronics
16 Pages / 0.45 MByte
ST Microelectronics
1 Pages / 0.13 MByte

STD1NK60 Documents

ST Microelectronics
DPAK N-CH 600V 1A
ST Microelectronics
DPAK N-CH 600V 1A
ST Microelectronics
IPAK N-CH 600V 1A
ST Microelectronics
N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET
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