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Part Datasheet Search > MOSFETs > ST Microelectronics > STF11NM50N Datasheet PDF
STF11NM50N
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STF11NM50N Datasheet PDF (16 Pages)
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STF11NM50N Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.4 Ω
Polarity
N-Channel
Power Dissipation
25 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Continuous Drain Current (Ids)
8.5A
Rise Time
10 ns
Input Capacitance (Ciss)
547pF @50V(Vds)
Input Power (Max)
25 W
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
25W (Tc)

STF11NM50N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
150℃ (TJ)

STF11NM50N Documents

ST Microelectronics
16 Pages / 0.64 MByte
ST Microelectronics
1 Pages / 0.09 MByte
ST Microelectronics
13 Pages / 0.45 MByte
ST Microelectronics
34 Pages / 0.79 MByte

STF11NM50 Documents

ST Microelectronics
TO-220FP N-CH 500V 8.5A
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