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Part Datasheet Search > IGBTs > ST Microelectronics > STGB14NC60KDT4 Datasheet PDF
STGB14NC60KDT4
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STGB14NC60KDT4 Datasheet PDF (16 Pages)
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STGB14NC60KDT4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
25.0 A
Case/Package
TO-263-3
Polarity
N-Channel
Power Dissipation
80000 mW
Input Capacitance
760 pF
Rise Time
8.50 ns
Breakdown Voltage (Collector to Emitter)
600 V
Thermal Resistance
62.5 ℃/W
Reverse recovery time
37 ns
Input Power (Max)
80 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
80000 mW

STGB14NC60KDT4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Width
9.35 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STGB14NC60KDT4 Documents

ST Microelectronics
16 Pages / 0.52 MByte
ST Microelectronics
1 Pages / 0.13 MByte

STGB14NC60 Documents

ST Microelectronics
Trans IGBT Chip N-CH 600V 25A 80000mW 3Pin(2+Tab) D2PAK T/R
ST Microelectronics
Trans IGBT Chip N-CH 600V 25A 80000mW 3Pin(2+Tab) D2PAK T/R
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