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Part Datasheet Search > IGBTs > ST Microelectronics > STGB20NC60V Datasheet PDF
STGB20NC60V
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STGB20NC60V Datasheet PDF (20 Pages)
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STGB20NC60V Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Power Dissipation
200 W
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
200 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200000 mW

STGB20NC60V Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

STGB20NC60V Documents

ST Microelectronics
20 Pages / 0.45 MByte
ST Microelectronics
51 Pages / 2.12 MByte
ST Microelectronics
35 Pages / 2.4 MByte

STGB20NC60 Documents

ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(2+Tab) D2PAK T/R
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(2+Tab) D2PAK T/R
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