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Part Datasheet Search > IGBTs > ST Microelectronics > STGW30NC60WD Datasheet PDF
STGW30NC60WD
$ 3.045
STGW30NC60WD Datasheet PDF (13 Pages)
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STGW30NC60WD Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
60.0 A
Case/Package
TO-247-3
Power Rating
200 W
Number of Positions
3 Position
Polarity
N-Channel
Power Dissipation
200 W
Input Capacitance
2080 pF
Rise Time
12.0 ns
Breakdown Voltage (Collector to Emitter)
600 V
Thermal Resistance
50 ℃/W
Reverse recovery time
40 ns
Input Power (Max)
200 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200 W

STGW30NC60WD Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.75 mm
Size-Width
5.15 mm
Size-Height
20.15 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STGW30NC60WD Documents

ST Microelectronics
13 Pages / 0.87 MByte
ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
1 Pages / 0.13 MByte

STGW30NC60 Documents

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ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(3+Tab) TO-247 Tube
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