STGW40M120DF3 Datasheet PDF - ST Microelectronics

●The STGW40M120DF3 is a Trench gate field-stop IGBT developed using an advanced proprietary Trench gate field-stop structure. The device is part of the M series of IGBT, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

● Tight parameters distribution

● Safer paralleling

● Low thermal resistance

● Soft and fast recovery anti-parallel diode

● 10µs Short-circuit withstand time