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Part Datasheet Search > MOSFETs > ST Microelectronics > STP60NE06-16 Datasheet PDF
STP60NE06-16
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STP60NE06-16 Datasheet PDF (11 Pages)
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STP60NE06-16 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
60.0 V
Current Rating
60.0 A
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
16.0 mΩ
Polarity
N-Channel
Power Dissipation
150W (Tc)
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
60.0 A
Rise Time
125 ns
Input Capacitance (Ciss)
6200pF @25V(Vds)
Power Dissipation (Max)
150W (Tc)

STP60NE06-16 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Operating Temperature
175℃ (TJ)

STP60NE06-16 Documents

ST Microelectronics
11 Pages / 0.27 MByte

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