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STP60NE06L-16
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STP60NE06L-16 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
60.0 V
Current Rating
60.0 A
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
12 mΩ
Polarity
N-Channel
Power Dissipation
150 W
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Breakdown Voltage (Gate to Source)
±15.0 V
Continuous Drain Current (Ids)
60.0 A
Rise Time
155 ns
Input Capacitance (Ciss)
4150pF @25V(Vds)
Fall Time
25 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
65 ℃
Power Dissipation (Max)
150W (Tc)

STP60NE06L-16 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
9.15 mm
Operating Temperature
175℃ (TJ)

STP60NE06L-16 Documents

ST Microelectronics
9 Pages / 0.25 MByte
ST Microelectronics
9 Pages / 0.34 MByte

STP60NE06 Documents

ST Microelectronics
MOSFET N-CH 60V 60A TO-220
ST Microelectronics
TO-220 N-CH 60V 60A
ST Microelectronics
N - Channel 60V - 0.014 - 60A To-220/to-220fp Stripfet Power Mosfet
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