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Part Datasheet Search > MOSFETs > ST Microelectronics > STU6N62K3 Datasheet PDF
STU6N62K3
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STU6N62K3 Datasheet PDF (19 Pages)
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STU6N62K3 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-251-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.95 Ω
Polarity
N-Channel
Power Dissipation
90 W
Threshold Voltage
3.75 V
Drain to Source Voltage (Vds)
620 V
Rise Time
12.5 ns
Input Capacitance (Ciss)
875pF @50V(Vds)
Input Power (Max)
90 W
Fall Time
19 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
90W (Tc)

STU6N62K3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
6.6 mm
Size-Width
2.4 mm
Size-Height
6.2 mm
Operating Temperature
150℃ (TJ)

STU6N62K3 Documents

ST Microelectronics
19 Pages / 0.94 MByte
ST Microelectronics
19 Pages / 1.02 MByte
ST Microelectronics
18 Pages / 0.17 MByte

STU6N62 Documents

ST Microelectronics
N-Channel 620V 1.2Ω 30NC Through Hole SuperMESH3™ Power Mosfet - IPAK
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