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TIP141T
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TIP141T Datasheet PDF (5 Pages)
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TIP141T Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Breakdown Voltage (Collector to Emitter)
80 V
hFE Min
1000 @5A, 4V
Input Power (Max)
80 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
65 ℃

TIP141T Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Bulk
Operating Temperature
150℃ (TJ)

TIP141T Documents

Fairchild
5 Pages / 0.21 MByte
Fairchild
2 Pages / 0.04 MByte

TIP141 Documents

Multicomp
MULTICOMP TIP141 Bipolar (BJT) Single Transistor, Darlington, NPN, 80V, 125W, 10A, 1000 hFE
ON Semiconductor
TO-247 NPN 80V 10A
ST Microelectronics
Trans Darlington NPN 80V 10A 3Pin(3+Tab) TO-218
Fairchild
Trans Darlington NPN 80V 10A 125000mW 3Pin(3+Tab) TO-3PN
Central Semiconductor
SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS
Motorola
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60–100 VOLTS 125W
NTE Electronics
t-Npn Si- Po Darlington
TI
80V, 10A, 125W, NPN darlington-connected silicon power transistor
Mospec
POWER TRANSISTORS(10A,60-100V,125W)
Samsung
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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