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Part Datasheet Search > MOSFETs > Vishay Siliconix > TP0610K-T1-E3 Datasheet PDF
TP0610K-T1-E3
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TP0610K-T1-E3 Datasheet PDF (2 Pages)
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TP0610K-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Drain to Source Resistance (on) (Rds)
6 Ω
Power Dissipation
350 W
Drain to Source Voltage (Vds)
60 V
Input Capacitance (Ciss)
23pF @25V(Vds)
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
350mW (Ta)

TP0610K-T1-E3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Size-Length
3.04 mm
Size-Width
1.4 mm
Size-Height
1.02 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

TP0610K-T1-E3 Documents

Vishay Siliconix
2 Pages / 0.06 MByte
Vishay Siliconix
8 Pages / 0.2 MByte
Vishay Siliconix
1 Pages / 0.12 MByte

TP0610KT1 Documents

Vishay Siliconix
MOSFET P-CH 60V 185mA SOT23
VISHAY
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,185mA I(D),TO-236
Vishay Intertechnology
Transistor
Vishay Semiconductor
Trans MOSFET P-CH 60V 0.185A 3Pin SOT-23 T/R
VISHAY
SOT-23-3P-CH 60V 185mA 10Ω
VISHAY
SOT-23-3P-CH 60V 185mA 10Ω
Vishay Siliconix
MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃
Vishay Siliconix
VISHAY TP0610K-T1-GE3 MOSFET Transistor, P Channel, -185mA, -60V, 10Ω, -4.5V, -2V
Vishay Semiconductor
MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃
Vishay Semiconductor
MOSFET 60V -0.185A 350mW 10Ω @ 4.5V
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