UCC27519DBVT Datasheet PDF - TI

●The UCC27519DBVT is a single-channel high-speed low-side Gate Driver Device can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, it can source and sink high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 17ns. It provides 4A source, 4A sink (symmetrical drive) peak-drive current capability at VDD=12V. It is designed to operate over a wide VDD range of 4.5 to 18V and a wide temperature range of -40 to 140°C. Internal under-voltage lockout (UVLO) circuitry on the VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.

● Gate-driver device offering superior replacement of NPN and PNP discrete solutions

● Outputs held low during VDD-UVLO (ensures glitch-free operation at power up and power-down)

● CMOS input logic threshold (function of supply voltage with hysteresis)

● Hysteretic-logic thresholds for high noise immunity

● EN pin for enable function (allowed to be no connect)

● Output held low when input pins are floating

● Input pin absolute maximum voltage levels not restricted by VDD pin bias supply voltage

● 17ns Typical fast propagation delay

● Green product and no Sb/Br