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IKW40T120 Datasheet PDF

Part Series:
IKW40T120 Series
Category:
IGBTs
Description:
INFINEON IKW40T120 IGBT Single Transistor, General Purpose, 75A, 2.3V, 270W, 1.2kV, TO-247, 3Pins
Updated Time: 2023/09/27 08:45:01 (UTC + 8)

IKW40T120 - Infineon Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Rating
270 W
Number of Positions
3 Position
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IKW40T120 - Infineon Function Overview

The IKW40T120 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel emitter controlled diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
Lowest Vce (sat) drop for lower conduction losses
Low switching losses
Easy to parallel switching capability due to positive temperature coefficient in Vce (sat)
High ruggedness, temperature stable behaviour
Low EMI emissions
Low gate charge
Very tight parameter distribution
Highest efficiency
Low conduction and switching losses
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