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UCC25600 Datasheet PDF

Part Series:
UCC25600 Series
Category:
DC-DC Converters
Description:
DC-DC Controller, Resonant Mode, 11.5V to 18V, 1 Output, 380kHz, SOIC-8
Updated Time: 2023/01/13 01:50:17 (UTC + 8)

UCC25600 Datasheet PDF DC-DC Converters

30 Pages
TI
LLC Resonant Half-Bridge Converter 300W Evaluation Module

UCC25600D - TI Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
350 kHz
Number of Pins
8 Pin
Supply Voltage (DC)
11.5V (min)
Case/Package
SOIC-8
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UCC25600D - TI Function Overview

The UCC25600D is a 8-pin High Performance Resonant Mode Controller designed for DC-to-DC applications using resonant topologies, especially the LLC half-bridge resonant converter. The internal oscillator supports the switching frequencies from 40 to 350kHz. This high-accuracy oscillator realizes the minimum switching frequency limiting with 4% tolerance, allowing the designer to avoid over-design of the power stage and, thus, further reducing overall system cost. The programmable dead time enables zero-voltage switching with minimum magnetizing current. This maximizes system efficiency across a variety of applications. The programmable soft-start timer maximizes design flexibility demanded by the varied requirements of end equipment using a half-bridge topology. By incorporating a 0.4A source and 0.8A sink driving capability, a low cost, reliable gate driver transformer is a real option.
Variable switching frequency control
Programmable minimum switching frequency with 4% accuracy (3% accuracy, -20 to 105°C temperature)
Programmable maximum switching frequency
Programmable dead time for best efficiency
Programmable soft-start time
Easy ON and OFF control
Over-current protection
Over-temperature protection
Bias voltage UVLO and overvoltage protection
Integrated gate driver with 0.4A source and 0.8A sink capability
Green product and no Sb/Br
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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