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2N5192G
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2N5192G Datasheet PDF (6 Pages)
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2N5192G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
2 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
80.0 V
Current Rating
4.00 A
Case/Package
TO-225-3
Halogen Free Status
Halogen Free
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
40 W
Breakdown Voltage (Collector to Emitter)
80 V
Thermal Resistance
3.12℃/W (RθJC)
Continuous Collector Current
4A
hFE Min
20 @1.5A, 2V
hFE Max
80
Input Power (Max)
40 W
DC Current Gain (hFE)
2
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
40000 mW

2N5192G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Material
Silicon
Size-Length
7.8 mm
Operating Temperature
-65℃ ~ 150℃

2N5192G Documents

ON Semiconductor
6 Pages / 0.13 MByte
ON Semiconductor
134 Pages / 0.15 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
11 Pages / 1.83 MByte
ON Semiconductor
1 Pages / 0.13 MByte

2N5192 Documents

ST Microelectronics
Trans GP BJT NPN 80V 4A 3Pin(3+Tab) SOT-32 Tube
ON Semiconductor
TO-225-3 NPN 80V 4A
Central Semiconductor
NPN SILICON TRANSISTOR GENERAL PURPOSE POWER
National Semiconductor
TRANSISTOR NPN, Si, POWER TRANSISTOR, TO-126, TO-126, 3 PIN, BIP General Purpose Power
Semicoa Semiconductor
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-126VAR, 3 PIN
Advanced Semiconductor
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-126VAR, 3 PIN
TI
Trans GP BJT NPN 80V 4A 3Pin(3+Tab) SOT-32
Motorola
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Semelab
4A, 80V, NPN, Si, POWER TRANSISTOR, TO-126VAR, 3 PIN
Continental Device
40W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4A Ic, 7 hFE.
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