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Part Datasheet Search > IGBTs > Infineon > FF200R12KE3HOSA1 Datasheet PDF
FF200R12KE3HOSA1
$ 119.1
FF200R12KE3HOSA1 Datasheet PDF (8 Pages)
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FF200R12KE3HOSA1 Specifications

TYPE
DESCRIPTION
Number of Pins
7 Pin
Case/Package
AG-62MM-1
Power Dissipation
1.05 kW
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
14nF @25V
Input Power (Max)
1050 W
Operating Temperature (Max)
125 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
1050000 mW

FF200R12KE3HOSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Size-Length
106.4 mm
Size-Width
61.4 mm
Size-Height
29 mm
Operating Temperature
-40℃ ~ 125℃

FF200R12KE3HOSA1 Documents

Infineon
8 Pages / 0.63 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
40 Pages / 6.73 MByte
Infineon
1 Pages / 0.13 MByte

FF200R12KE3 Documents

Infineon
Trans IGBT Module N-CH 1200V 295A 1050000mW 7Pin 62MM-1 Tray
Eupec
IGBT-Module
Infineon
Trans IGBT Module N-CH 1200V 295A 1050000mW 7Pin Tray
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