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Part Datasheet Search > IGBTs > Infineon > FF200R12KT3_E Datasheet PDF
FF200R12KT3_E
$ 81.275
FF200R12KT3_E Datasheet PDF (8 Pages)
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FF200R12KT3_E Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
7 Pin
Case/Package
AG-62MM-1
Power Dissipation
1050000 mW
Operating Temperature (Max)
125 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
1.05 kW

FF200R12KT3_E Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Size-Length
106.4 mm
Size-Width
61.4 mm
Size-Height
29 mm
Operating Temperature
-40℃ ~ 125℃

FF200R12KT3_E Documents

Infineon
8 Pages / 0.39 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
33 Pages / 2.24 MByte

FF200R12KT3 Documents

Infineon
Trans IGBT Module N-CH 1.2kV 295A 7Pin 62MM
Eupec
Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Infineon
Trans IGBT Module N-CH 1200V 295A 1050000mW 7Pin Tray
Infineon
Trans IGBT Module N-CH 1200V 295A 1050000mW 7Pin 62MM-1 Tray
Infineon
Igbt, Module, n-Ch, 1.2kV, 295A
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