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Part Datasheet Search > Infineon > FF200R12KE4PHOSA1 Datasheet PDF
FF200R12KE4PHOSA1
$ 161.088
FF200R12KE4PHOSA1 Datasheet PDF (9 Pages)
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FF200R12KE4PHOSA1 Specifications

TYPE
DESCRIPTION
Number of Pins
7 Pin
Case/Package
AG-62MM-1
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
14nF @25V

FF200R12KE4PHOSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Operating Temperature
-40℃ ~ 150℃

FF200R12KE4PHOSA1 Documents

Infineon
9 Pages / 0.58 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
40 Pages / 6.73 MByte

FF200R12KE4 Documents

Infineon
Trans IGBT Module N-CH 1200V 240A 1100000mW 7Pin 62MM Tray
Infineon
Trans IGBT Module N-CH 1200V 200A 7Pin 62MM-1
Infineon
INFINEON FF200R12KE4HOSA1 IGBT Array & Module Transistor, Dual NPN, 240A, 1.75V, 1.1kW, 1.2kV, Module
Infineon
Our well-known 62mm 1200V dual IGBT modules with trench/fieldstop IGBT4, optimized Emitter Controlled Diode and pre-applied Thermal Interface Material are the right choice for your design.
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