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Part Datasheet Search > MOSFETs > Infineon > IPD082N10N3GATMA1 Datasheet PDF
IPD082N10N3GATMA1
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IPD082N10N3GATMA1 Datasheet PDF (12 Pages)
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IPD082N10N3GATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
125 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.007 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
2.7 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
80A
Rise Time
42 ns
Input Capacitance (Ciss)
3980pF @50V(Vds)
Input Power (Max)
125 W
Fall Time
8 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
125000 mW

IPD082N10N3GATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 175℃ (TJ)

IPD082N10N3GATMA1 Documents

Infineon
12 Pages / 0.76 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IPD082N10N3 Documents

Infineon
DPAK N-CH 100V 80A
Infineon
Power-Transistor
Infineon
Trans MOSFET N-CH 100V 80A 3Pin TO-252 T/R
Infineon
DPAK N-CH 100V 80A
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