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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFH320N10T2 Datasheet PDF
IXFH320N10T2
$ 11.108
IXFH320N10T2 Datasheet PDF (6 Pages)
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IXFH320N10T2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
3.5 mΩ
Polarity
N-CH
Power Dissipation
1000 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
320A
Rise Time
46 ns
Input Capacitance (Ciss)
26000pF @25V(Vds)
Input Power (Max)
1000 W
Fall Time
177 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1000W (Tc)

IXFH320N10T2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

IXFH320N10T2 Documents

IXYS Semiconductor
6 Pages / 0.16 MByte
IXYS Semiconductor
6 Pages / 0.18 MByte

IXFH320N10 Documents

IXYS Semiconductor
TO-247 N-CH 100V 320A
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