IXFR140N30P Datasheet PDF - IXYS Semiconductor

●The IXFR140N30P is a Polar™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density.

● Silicon chip on direct-copper-bond substrate - High power dissipation and isolated mounting surface

● Unclamped inductive switching (UIS) rating

● Low package inductance - Easy to drive and to protect

● Easy to mount

● Space saving

● 2500V Electrical isolation voltage