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Part Datasheet Search > MOSFETs > Infineon > IRF1010ZPBF Datasheet PDF
IRF1010ZPBF
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IRF1010ZPBF Datasheet PDF (12 Pages)
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IRF1010ZPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
140 W
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
7.5 mΩ
Polarity
N-Channel
Power Dissipation
140 W
Drain to Source Voltage (Vds)
55 V
Breakdown Voltage (Drain to Source)
55 V
Continuous Drain Current (Ids)
94A
Rise Time
150 ns
Input Capacitance (Ciss)
2840pF @25V(Vds)
Input Power (Max)
140 W
Fall Time
92 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
140000 mW

IRF1010ZPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.54 mm
Size-Width
4.69 mm
Size-Height
8.77 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF1010ZPBF Documents

Infineon
12 Pages / 0.38 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRF1010 Documents

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HEXFET POWER MOSFET
Infineon
TO-220AB N-CH 60V 84A
Infineon
TO-220AB N-CH 55V 85A
Infineon
TO-220AB N-CH 60V 84A
Infineon
D2PAK N-CH 55V 85A
International Rectifier
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 12 Milliohms; ID 84A; TO-220AB; PD 200W; gFS 69S
Infineon
D2PAK N-CH 60V 84A
Infineon
D2PAK N-CH 55V 85A
Infineon
D2PAK N-CH 55V 85A
Infineon
D2PAK N-CH 60V 84A
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