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Part Datasheet Search > MOSFETs > Infineon > IRFH8318TRPBF Datasheet PDF
IRFH8318TRPBF
$ 0.183
IRFH8318TRPBF Datasheet PDF (9 Pages)
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IRFH8318TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PowerTDFN-8
Power Rating
59 W
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0025 Ω
Polarity
N-Channel
Power Dissipation
3.6 W
Threshold Voltage
1.8 V
Input Capacitance
3180 pF
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
27A
Rise Time
33 ns
Input Capacitance (Ciss)
3180pF @10V(Vds)
Input Power (Max)
3.6 W
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.6W (Ta), 59W (Tc)

IRFH8318TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6 mm
Size-Width
5 mm
Size-Height
0.83 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFH8318TRPBF Documents

Infineon
9 Pages / 0.23 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte

IRFH8318 Documents

Infineon
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
Infineon
QFN N-CH 30V 27A
International Rectifier
Trans MOSFET N-CH 30V 27A 8Pin QFN EP T/R
International Rectifier
Trans MOSFET N-CH 30V 27A 8Pin QFN EP T/R
Infineon
QFN N-CH 30V 27A
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