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Part Datasheet Search > MOSFETs > Infineon > IRFHS9301TRPBF Datasheet PDF
IRFHS9301TRPBF
Part 3D Model
$ 0.269
IRFHS9301TRPBF Datasheet PDF (9 Pages)
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IRFHS9301TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
PQFN-6
Power Rating
2.1 W
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.03 Ω
Polarity
P-Channel
Power Dissipation
2.1 W
Input Capacitance
580 pF
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Continuous Drain Current (Ids)
6A
Rise Time
80 ns
Input Capacitance (Ciss)
580pF @25V(Vds)
Input Power (Max)
2.1 W
Fall Time
25 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.1 W

IRFHS9301TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.1 mm
Size-Width
2.1 mm
Size-Height
0.95 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFHS9301TRPBF Documents

Infineon
9 Pages / 0.24 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
6 Pages / 3.97 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.14 MByte

IRFHS9301 Documents

Infineon
-30V Single P-Channel HEXFET Power MOSFET in a PQFN 2mm x 2mm package
Infineon
PQFN P-CH 30V 6A
International Rectifier
Trans MOSFET P-CH 30V 6A 6Pin PQFN EP T/R
International Rectifier
Trans MOSFET P-CH 30V 6A 6Pin PQFN EP T/R
Infineon
PQFN P-CH 30V 6A
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