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Part Datasheet Search > MOSFETs > Infineon > IRFR120NTRLPBF Datasheet PDF
IRFR120NTRLPBF
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IRFR120NTRLPBF Datasheet PDF (11 Pages)
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IRFR120NTRLPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
39 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.21 Ω
Polarity
N-Channel
Power Dissipation
48 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
9.4A
Rise Time
23 ns
Input Capacitance (Ciss)
330pF @25V(Vds)
Fall Time
23 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
48 W

IRFR120NTRLPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.39 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFR120NTRLPBF Documents

Infineon
11 Pages / 0.38 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.14 MByte
Infineon
10 Pages / 0.24 MByte

IRFR120 Documents

International Rectifier
MOSFET N-CH 100V 7.7A DPAK
Vishay Siliconix
MOSFET N-CH 100V 7.7A DPAK
Fairchild
Trans MOSFET N-CH Si 100V 8.4A 3Pin(2+Tab) DPAK
Intersil
8.4A, 100V, 0.27Ω, N-Channel Power MOSFETs
VISHAY
MOSFET N-CH 100V 7.7A DPAK
Vishay Semiconductor
Trans MOSFET N-CH 100V 7.7A 3Pin(2+Tab) DPAK
Vishay Intertechnology
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Harris
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Infineon
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3
Samsung
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
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