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IRFR120PBF
$ 0.518
IRFR120PBF Datasheet PDF (11 Pages)
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IRFR120PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
270 mΩ
Polarity
N-Channel
Power Dissipation
2.5 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
7.70 A
Rise Time
27 ns
Input Capacitance (Ciss)
360pF @25V(Vds)
Input Power (Max)
2.5 W
Fall Time
17 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta), 42W (Tc)

IRFR120PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.39 mm
Operating Temperature
-55℃ ~ 150℃
Minimum Packing Quantity
2000

IRFR120PBF Documents

VISHAY
11 Pages / 0.8 MByte
VISHAY
11 Pages / 0.78 MByte
VISHAY
2 Pages / 0.15 MByte

IRFR120 Documents

International Rectifier
MOSFET N-CH 100V 7.7A DPAK
Vishay Siliconix
MOSFET N-CH 100V 7.7A DPAK
Fairchild
Trans MOSFET N-CH Si 100V 8.4A 3Pin(2+Tab) DPAK
Intersil
8.4A, 100V, 0.27Ω, N-Channel Power MOSFETs
VISHAY
MOSFET N-CH 100V 7.7A DPAK
Vishay Semiconductor
Trans MOSFET N-CH 100V 7.7A 3Pin(2+Tab) DPAK
Vishay Intertechnology
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Harris
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Infineon
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3
Samsung
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
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