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Part Datasheet Search > MOSFETs > Infineon > IRFR120ZPBF Datasheet PDF
IRFR120ZPBF
$ 0.083

IRFR120ZPBF Datasheet PDF - Infineon

Manufacturer:
Infineon
Category:
MOSFETs
Case Package:
TO-252-3
Description:
DPAK N-CH 100V 8.7A
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
IRFR120ZPBF Datasheet (11 Pages)
Package Outline Dimension on9 Page10 Page
IRFR120ZPBF User Reference Manual Guide (270 Pages)IRFR120ZPBF Application Note (37 Pages)
IRFR120ZPBF Datasheet PDF (11 Pages)
View Datasheet
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IRFR120ZPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
35 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.19 Ω
Polarity
N-CH
Power Dissipation
35 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
8.7A
Rise Time
26 ns
Input Capacitance (Ciss)
310pF @25V(Vds)
Fall Time
23 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
35W (Tc)
View Datasheet >

IRFR120ZPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Material
Silicon
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.39 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)
View Datasheet >

IRFR120ZPBF Documents

IRFR120ZPBF Datasheet
Infineon
11 Pages / 0.31 MByte
IRFR120ZPBF User Reference Manual Guide
Infineon
270 Pages / 11.59 MByte
IRFR120ZPBF Other Datasheet PDF
Infineon
30 Pages / 0.64 MByte
IRFR120ZPBF Drawing Diagrams
Infineon
2 Pages / 0.17 MByte
IRFR120ZPBF Application Note
Infineon
37 Pages / 2.01 MByte

IRFR120 Documents

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Fairchild
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Intersil
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VISHAY
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IRFR120 Datasheet PDF
Vishay Semiconductor
Trans MOSFET N-CH 100V 7.7A 3Pin(2+Tab) DPAK
IRFR120 Datasheet PDF
Vishay Intertechnology
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
IRFR120 Datasheet PDF
Harris
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IRFR120 Datasheet PDF
Infineon
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3
IRFR120 Datasheet PDF
Samsung
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
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