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IXBP5N160G Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-220-3

Description:

Trans IGBT Chip N-CH 1600V 5.7A 68000mW 3Pin(3+Tab) TO-220AB

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IXBP5N160G Datasheet PDF (2 Pages)

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IXBP5N160G Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Power Dissipation

68000 mW

Breakdown Voltage (Collector to Emitter)

1600 V

Input Power (Max)

68 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

68000 mW

IXBP5N160G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

IXBP5N160G Environmental

IXBP5N160G Function Overview

IXBP5N160G Documents

IXBP5N160G Other Datasheet PDF

IXYS Semiconductor

2 Pages / 0.03 MByte

IXBP5N160 Documents

IXBP5N160G Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 1600V 5.7A 68000mW 3Pin(3+Tab) TO-220AB

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