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Part Datasheet Search > IGBTs > IXYS Semiconductor > MIXA60W1200TED Datasheet PDF
MIXA60W1200TED
$ 69.62
MIXA60W1200TED Datasheet PDF (6 Pages)
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MIXA60W1200TED Specifications

TYPE
DESCRIPTION
Case/Package
E2-Pack
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
290 W

MIXA60W1200TED Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Box
Operating Temperature
-40℃ ~ 125℃ (TJ)

MIXA60W1200TED Documents

IXYS Semiconductor
6 Pages / 0.17 MByte

MIXA60W1200 Documents

IXYS Semiconductor
Trans IGBT Module N-CH 1.2kV 85A Box
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