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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGX75N250 Datasheet PDF
IXGX75N250
$ 128.709
IXGX75N250 Datasheet PDF (5 Pages)
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IXGX75N250 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Dissipation
780000 mW
Breakdown Voltage (Collector to Emitter)
2500 V
Input Power (Max)
780 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
780000 mW

IXGX75N250 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Height
21.34 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGX75N250 Documents

IXYS Semiconductor
5 Pages / 0.17 MByte
IXYS Semiconductor
5 Pages / 0.17 MByte

IXGX75 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 2500V 170A 780000mW 3Pin(3+Tab) PLUS 247
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