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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXER60N120 Datasheet PDF
IXER60N120
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IXER60N120 Datasheet PDF (4 Pages)
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IXER60N120 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
ISOPLUS-247
Polarity
NPN, N-Channel
Power Dissipation
375 W
Rise Time
50.0 ns
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
375 W

IXER60N120 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXER60N120 Documents

IXYS Semiconductor
4 Pages / 0.25 MByte

IXER60 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 1.2kV 95A 3Pin(3+Tab) ISOPLUS 247
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