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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGH30N60B2D1 Datasheet PDF
IXGH30N60B2D1
$ 0.51
IXGH30N60B2D1 Datasheet PDF (6 Pages)
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IXGH30N60B2D1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Rating
190 W
Power Dissipation
190000 mW
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
25 ns
Input Power (Max)
190 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
190000 mW

IXGH30N60B2D1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGH30N60B2D1 Documents

IXYS Semiconductor
6 Pages / 0.49 MByte
IXYS Semiconductor
6 Pages / 0.58 MByte

IXGH30N60B2 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 600V 70A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 70A 190000mW 3Pin(3+Tab) TO-247AD
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