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IXGP16N60C2D1 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-220-3

Description:

Trans IGBT Chip N-CH 600V 40A 150000mW 3Pin(3+Tab) TO-220

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Documentation:

IXGP16N60C2D1 Datasheet (7 Pages)

IXGP16N60C2D1 Datasheet PDF (7 Pages)

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IXGP16N60C2D1 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Power Dissipation

150000 mW

Breakdown Voltage (Collector to Emitter)

600 V

Reverse recovery time

30 ns

Input Power (Max)

150 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

150000 mW

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IXGP16N60C2D1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXGP16N60C2D1 Environmental

IXGP16N60C2D1 Function Overview

IXGP16N60C2D1 Documents

IXGP16N60C2D1 Datasheet

IXYS Semiconductor

7 Pages / 0.21 MByte

IXGP16N60C2D1 Other Datasheet PDF

IXYS Semiconductor

5 Pages / 0.3 MByte

IXGP16N60C2 Documents

IXGP16N60C2 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 600V 40A 3Pin(3+Tab) TO-220

IXGP16N60C2D1 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 600V 40A 150000mW 3Pin(3+Tab) TO-220

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